APTM100DU18TG Microsemi Power Products Group, APTM100DU18TG Datasheet

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APTM100DU18TG

Manufacturer Part Number
APTM100DU18TG
Description
MOSFET MOD DUAL COMMON SRC SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100DU18TG

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
210 mOhm @ 21.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
43A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
372nC @ 10V
Input Capacitance (ciss) @ Vds
10400pF @ 25V
Power - Max
780W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
G1
S1
NTC1
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
Dual Common Source
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
S1
G1
D1
APT0502 on www.microsemi.com
Q1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
D1
S
G2
G2
S2
S2
S
D2
Parameter
Q2
NTC2
NTC1
D2
D2
NTC2
G2
S2
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 25°C
= 80°C
= 25°C
= 43A @ Tc = 25°C
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 1000V
= 180mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Lead frames for power connections
APTM100DU18TG
Max ratings
DSon
1000
3000
172
±30
210
780
43
33
25
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTM100DU18TG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100DU18TG V = 1000V DSS R = 180mΩ typ @ Tj = 25°C DSon I = 43A @ Tc = 25°C D Application • ...

Page 2

... SD dv/dt Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 43A di/dt ≤ 700A/µ APTM100DU18TG = 25°C unless otherwise specified j Test Conditions V = 0V,V = 1000V 0V,V = 800V T GS ...

Page 3

... Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM100DU18TG To Heatsink R T: Thermistor temperature 25    Thermistor value     −  ...

Page 4

... Drain Current DS(on) 1.4 Normalized to V =10V @ 21.5A 1 =10V 1 0.9 0 Drain Current (A) D APTM100DU18TG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 160 V 7V 140 250µs pulse test @ < 0.5 duty cycle 120 6.5V 100 5. Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM100DU18TG ON resistance vs Temperature 2.5 V =10V GS I =21.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100DU18TG 80 V ...

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