APTC80H29SCTG Microsemi Power Products Group, APTC80H29SCTG Datasheet - Page 6

• Manufacturer Part Number: APTC80H29SCTG
• Description: MOSFET PWR MOD FULL BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTC80H29SCTG

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 91nC @ 10V
• Input Capacitance (ciss) @ Vds: 2254pF @ 25V
• Power - Max: 156W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
500
400
300
200
100
400
350
300
250
200
150
100
80
60
40
20
50
0
0
0
5
5
4
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
R
T
L=100µH
V
D=50%
R
T
T
DS
G
J
J
DS
G
J
C
=125°C
DS
Switching Energy vs Current
=125°C
G
=5Ω
=125°C
=5Ω
=75°C
=533V
=5Ω
=533V
=533V
Delay Times vs Current
6
10
10
I
D
I
I
D
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
8
ZCS
Switching
15
Hard
15
10
E
td(off)
on
ZVS
td(on)
E
20
20
off
12
14
25
25
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1000
1250
1000
100
750
500
250
50
40
30
20
10
10
0
1
0
Source to Drain Diode Forward Voltage
0.2
5
0
APTC80H29SCTG
Switching Energy vs Gate Resistance
V
R
T
L=100µH
V
I
T
L=100µH
V
DS
J
G
D
Rise and Fall times vs Current
=125°C
J
=5Ω
DS
=15A
SD
=125°C
=533V
=533V
, Source to Drain Voltage (V)
T
10
Gate Resistance (Ohms)
J
0.6
=150°C
10
E
I
D
off
, Drain Current (A)
20
T
J
15
=25°C
1
30
t
f
t
r
1.4
20
40
E
off
E
on
1.8
25
50
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