APTC80H29SCTG Microsemi Power Products Group, APTC80H29SCTG Datasheet

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APTC80H29SCTG

Manufacturer Part Number
APTC80H29SCTG
Description
MOSFET PWR MOD FULL BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTC80H29SCTG

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
290 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
3.9V @ 1mA
Gate Charge (qg) @ Vgs
91nC @ 10V
Input Capacitance (ciss) @ Vds
2254pF @ 25V
Power - Max
156W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
G1
S1
G2
S2
R
V
NTC1
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
Series & SiC parallel diodes
MOSFET Power Module
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
G3
S3
VBUS
S1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
Q2
Super Junction
Full - Bridge
CR1A
CR2A
0/VBUS
CR1B
CR2B
OUT1 OUT2
0/VBUS
G4
G2
S4
S2
CR3B
CR4B
VBUS
Parameter
CR3A
CR4A
Q3
Q4
OUT2
OUT1
NTC2
NTC1
NTC2
www.microsemi.com
G3
G4
S3
S4
Application
Features
Benefits
V
R
I
T
T
T
D
c
c
c
DSS
DSon
= 25°C
= 80°C
= 25°C
= 15A @ Tc = 25°C
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Parallel SiC Schottky Diode
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
= 800V
= 290mΩ max @ Tj = 25°C
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Symmetrical design
Lead frames for power connections
APTC80H29SCTG
Max ratings
800
±30
290
156
670
0.5
15
11
60
17
DSon
Unit
mΩ
mJ
W
V
A
V
A
1 – 7

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APTC80H29SCTG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC80H29SCTG V = 800V DSS R = 290mΩ max @ Tj = 25°C DSon I = 15A @ Tc = 25°C D Application • ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTC80H29SCTG = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 800V 125° 0V,V = 800V GS DS ...

Page 3

... APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC80H29SCTG Test Conditions T = 25° =1200V 175° 125° 25° 175°C j ...

Page 4

... Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to 1.3 V =10V @ 7.5A GS 1.2 1.1 1 0.9 0 Drain Current (A) D APTC80H29SCTG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature =10V =20V ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 10000 Ciss 1000 Coss 100 Crss Drain to Source Voltage (V) DS APTC80H29SCTG ON resistance vs Temperature 3.0 V =10V 7.5A 2.5 D 2.0 1.5 1.0 0.5 0.0 -50 0 150 T , Junction Temperature (°C) J Maximum Safe Operating Area 100 ...

Page 6

... ZCS 250 200 V =533V 150 DS D=50% 100 R =5Ω =125°C Hard =75°C Switching Drain Current (A) D APTC80H29SCTG Rise and Fall times vs Current =533V DS R =5Ω =125°C J L=100µ Drain Current (A) D Switching Energy vs Gate Resistance 1250 V =533V DS I =15A ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC80H29SCTG Single Pulse 0.001 ...

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