APTM100A23STG Microsemi Power Products Group, APTM100A23STG Datasheet - Page 6

• Manufacturer Part Number: APTM100A23STG
• Description: MOSFET PHASE LEG SER/PAR DIO SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100A23STG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 5V @ 5mA
• Gate Charge (qg) @ Vgs: 308nC @ 10V
• Input Capacitance (ciss) @ Vds: 8700pF @ 25V
• Power - Max: 694W
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
1.15
1.10
1.05
1.00
0.95
0.90
0.85
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
Capacitance vs Drain to Source Voltage
-50 -25
-50 -25
0
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
DS
T
J
, Drain to Source Voltage (V)
T
, Junction Temperature (°C)
10
C
, Case Temperature (°C)
0
0
25 50
25 50 75 100 125 150
20
30
75 100 125 150
40
Coss
Crss
Ciss
www.microsemi.com
50
1000
100
14
12
10
10
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
Gate Charge vs Gate to Source Voltage
0
-50 -25
1
APTM100A23STG
I
T
D
J
limited by
R
V
I
=36A
D
=25°C
50 100 150 200 250 300 350 400
Maximum Safe Operating Area
V
GS
DS
=18A
T
DS
ON resistance vs Temperature
on
=10V
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
0
Gate Charge (nC)
10
Single pulse
T
T
25
V
J
C
=150°C
=25°C
DS
=500V
50
V
DS
75 100 125 150
100
=200V
V
DS
10ms
100µs
=800V
1ms
1000
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