APTM100A23STG Microsemi Power Products Group, APTM100A23STG Datasheet

no-image

APTM100A23STG

Manufacturer Part Number
APTM100A23STG
Description
MOSFET PHASE LEG SER/PAR DIO SP4
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100A23STG

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
308nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
694W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
Series & parallel diodes
D
G1
S1
G2
S2
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
S1
G1
VBUS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Phase leg
Q1
Q2
0/VBUS
G2
S2
Parameter
V BUS
OUT
0/VBUS
NTC2
NTC1
NTC2
NTC1
OUT
OUT
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
c
c
c
= 36A @ Tc = 25°C
= 25°C
= 80°C
= 25°C
Motor control
Switched Mode Power Supplies
Uninterruptible Power Supplies
Power MOS 7
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
-
-
-
-
-
-
= 1000V
= 230mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
Lead frames for power connections
APTM100A23STG
Max ratings
DSon
1000
2500
±30
144
270
694
36
27
18
50
®
MOSFETs
Unit
mΩ
mJ
W
V
A
A
V
1 – 7

Related parts for APTM100A23STG

APTM100A23STG Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100A23STG V = 1000V DSS R = 230mΩ typ @ Tj = 25°C DSon I = 36A @ Tc = 25°C D ...

Page 2

... Symbol Characteristic V Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100A23STG = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125°C GS ...

Page 3

... To Heatsink R T: Thermistor temperature 25    Thermistor value     −     25 www.microsemi.com APTM100A23STG Min Typ Max Unit 1000 V 350 µA 600 60 A 1.9 2.3 2.2 V 1.7 290 ns 390 1340 nC 4700 Min Typ Max Unit 0.18 ° ...

Page 4

... SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTM100A23STG ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : www.microsemi.com 4 – 7 ...

Page 5

... Drain to Source Voltage ( Drain Current DS(on) 1.4 Normalized to V =10V @ 18A 1.3 GS 1.2 V =10V GS 1.1 1 0.9 0 Drain Current (A) D APTM100A23STG Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 160 V DS 140 250µs pulse test @ < 0.5 duty cycle 7V 120 6.5V 100 5. ...

Page 6

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM100A23STG ON resistance vs Temperature 2.5 V =10V GS I =18A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 7

... L=100µ off Source to Drain Diode Forward Voltage 1000 V =667V DS D=50% R =2.5Ω G 100 T =125° =75° 0.2 0.4 0.6 0 www.microsemi.com APTM100A23STG Rise and Fall times vs Current =667V DS =2.5Ω G =125° Drain Current (A) D =667V E DS off =36A D =125° ...

Related keywords