APTM50H10FT3G Microsemi Power Products Group, APTM50H10FT3G Datasheet - Page 6

• Manufacturer Part Number: APTM50H10FT3G
• Description: MOSFET MODULE FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50H10FT3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 4367pF @ 25V
• Power - Max: 312W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.6
1.2
0.8
0.4
80
60
40
20
450
400
350
300
250
200
150
100
0
2
0
50
10
10
0
Operating Frequency vs Drain Current
5
V
R
T
L=100µH
V
R
T
L=100µH
J
DS
G
=125°C
Switching Energy vs Current
J
DS
G
=5Ω
=125°C
=333V
20
=5Ω
=333V
20
10
Delay Times vs Current
switching
I
I
D
D
I
D
, Drain Current (A)
hard
, Drain Current (A)
, Drain Current (A)
30
15
30
ZCS
40
20
40
td(off)
td(on)
50
25
ZVS
V
D=50%
R
T
T
E
J
C
DS
G
=125°C
50
E
=75°C
on
=5Ω
=333V
60
30
off
60
70
35
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1000
100
100
2.5
1.5
0.5
10
80
60
40
20
1
0
2
1
0
Source to Drain Diode Forward Voltage
0.2 0.4 0.6 0.8
10
APTM50H10FT3G
0
Switching Energy vs Gate Resistance
V
R
T
L=100µH
V
I
T
L=100µH
D
V
DS
J
G
J
DS
=35A
=125°C
=125°C
T
=5Ω
SD
=333V
Rise and Fall times vs Current
=333V
J
=150°C
20
, Source to Drain Voltage (V)
10
Gate Resistance (Ohms)
I
D
E
, Drain Current (A)
off
30
T
20
J
=25°C
40
1
t
f
t
30
1.2 1.4 1.6 1.8
r
50
E
off
40
E
60
on
70
50
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