APTM50H10FT3G Microsemi Power Products Group, APTM50H10FT3G Datasheet - Page 4

• Manufacturer Part Number: APTM50H10FT3G
• Description: MOSFET MODULE FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM50H10FT3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 96nC @ 10V
• Input Capacitance (ciss) @ Vds: 4367pF @ 25V
• Power - Max: 312W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.45
0.35
0.25
0.15
0.05
140
120
100
0.4
0.3
0.2
0.1
80
60
40
20
0.00001
0
0
0
0
Low Voltage Output Characteristics
Normalized to
V
0.9
0.7
0.5
0.05
GS
0.3
0.1
V
V
DS
=10V @ 18.5A
R
GS
, Drain to Source Voltage (V)
DS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=10&15V
5
(on) vs Drain Current
20
I
D
, Drain Current (A)
0.0001
10
40
V
15
GS
=20V
V
GS
=10V
60
8V
20
rectangular Pulse Duration (Seconds)
0.001
7.5V
6.5V
5.5V
7V
6V
Single Pulse
25
80
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0.01
120
100
40
30
20
10
80
60
40
20
0
0
APTM50H10FT3G
DC Drain Current vs Case Temperature
25
0
V
250µs pulse test @ < 0.5 duty cycle
DS
V
0.1
1
> I
GS
T
50
D
Transfert Characteristics
C
, Gate to Source Voltage (V)
(on)xR
, Case Temperature (°C)
2
DS
T
3
75
(on)MAX
J
=125°C
T
J
=25°C
4
1
100
5
6
125
T
J
=-55°C
7
10
150
8
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