APTM10HM19FT3G Microsemi Power Products Group, APTM10HM19FT3G Datasheet - Page 5

• Manufacturer Part Number: APTM10HM19FT3G
• Description: MOSFET MOD FULL BRIDGE 100V SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTM10HM19FT3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 21 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 5100pF @ 25V
• Power - Max: 208W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100000
10000
1000
100
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
Capacitance vs Drain to Source Voltage
Threshold Voltage vs Temperature
-50 -25
-50 -25
0
Breakdown Voltage vs Temperature
V
T
DS
J
, Junction Temperature (°C)
, Drain to Source Voltage (V)
T
10
C
, Case Temperature (°C)
0
0
25 50 75 100 125 150
25 50 75 100 125 150
20
30
40
Coss
Ciss
Crss
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50
1000
100
APTM10HM19FT3G
10
16
14
12
10
1
Gate Charge vs Gate to Source Voltage
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
1
0
-50 -25
limited by
R
Single pulse
T
T
DSon
I
T
D
J
C
V
J
=70A
V
I
=150°C
=25°C
D
Maximum Safe Operating Area
=25°C
ON resistance vs Temperature
DS
40
GS
= 35A
T
J
, Drain to Source Voltage (V)
=10V
, Junction Temperature (°C)
80
0
Gate Charge (nC)
25
120 160 200 240 280
V
DS
10
=50V
50
75 100 125 150
V
DS
=20V
V
100ms
DS
10ms
=80V
1ms
100
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