APTM10HM19FT3G Microsemi Power Products Group, APTM10HM19FT3G Datasheet

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APTM10HM19FT3G

Manufacturer Part Number
APTM10HM19FT3G
Description
MOSFET MOD FULL BRIDGE 100V SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10HM19FT3G

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
21 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
208W
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
18
19
26
27
29
30
31
32
Example: 13/14 ; 29/30 ; 22/23 …
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Full - Bridge
2
15
Q1
Q2
29
3
25
4
30
22
23
13
23 22
14
7
8
7
31
Parameter
R1
8
20
32
Q3
Q4
10
19
18
11 12
16
11
10
4
3
16
15
14
13
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 70A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS V
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
APTM10HM19FT3G
= 100V
-
-
-
-
-
-
-
= 19mΩ typ @ Tj = 25°C
Max ratings
Low R
Low input and Miller capacitance
Low gate charge
Fast intrinsic diode
Avalanche energy rated
Very rugged
Symmetrical design
1500
100
300
±30
208
70
50
21
75
30
®
DSon
FREDFETs
Unit
mΩ
mJ
W
V
A
V
A
1 - 6

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APTM10HM19FT3G Summary of contents

Page 1

... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM10HM19FT3G V = 100V DSS R = 19mΩ typ @ Tj = 25°C DSon I = 70A @ Tc = 25°C D Application • ...

Page 2

... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 70A di/dt ≤ 700A/µ APTM10HM19FT3G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125°C ...

Page 3

... Resistance @ 25° 298.15 K 25/  exp B   SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTM10HM19FT3G To heatsink R T: Thermistor temperature 25    Thermistor value at T     T −  ...

Page 4

... GS 200 150 100 Drain to Source Voltage ( Drain Current DS(on) 1.6 Normalized to V =10V @ 35A GS 1.4 1 100 150 I , Drain Current (A) D APTM10HM19FT3G Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 125 100 Drain Current vs Case Temperature =10V =20V 200 ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 Ciss Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM10HM19FT3G ON resistance vs Temperature 2.5 V =10V 35A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM10HM19FT3G 160 V ...

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