APT8020JFLL Microsemi Power Products Group, APT8020JFLL Datasheet - Page 2

• Manufacturer Part Number: APT8020JFLL
• Description: MOSFET N-CH 800V 33A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT8020JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 5200pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and inforation contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
I
R
R
C
t
dv
C
V
C
Q
RRM
Q
Q
E
E
I
d(on)
d(off)
E
E
Q
SM
t
I
SD
θJC
θJA
oss
t
t
S
rr
/
iss
rss
off
off
gd
on
on
gs
r
rr
f
dt
g
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
S
S
S
10
= -33A,
= -33A,
= -33A,
-5
0.05
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.1
0.9
0.7
0.5
0.3
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
3
10
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
SINGLE PULSE
S
10
= -33A)
-3
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
Test Conditions
DD
DD
dv
device itself.
I
I
D
D
I
I
D
D
/
= 533V, V
= 533V, V
= 33A, R
= 33A, R
dt
V
V
= 33A @ 25°C
= 33A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 0.6Ω
= 400V
= 400V
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 25V
= 10V
= 15V
10
= 0V
j
-2
G
G
= +25°C, L = 5.51mH, R
GS
GS
= 5Ω
= 5Ω
= 15V
I
= 15V
S
≤
-
I
D
33A
Note:
di
Peak T J = P DM x Z θJC + T C
/
dt
MIN
MIN
MIN
Duty Factor D = t 1 / t
10
≤ 700A/µs
-1
t 1
G
= 25Ω, Peak I
t 2
5200
1000
1250
10.8
18.9
TYP
TYP
190
195
130
760
715
780
TYP
1.4
5.9
27
12
14
39
10
V
R
2
≤ 800V
MAX
MAX
MAX
132
320
650
0.24
1.3
L
APT8020JFLL
33
18
40
= 33A
1.0
T
J
≤ 150
Amps
Amps
UNIT
Volts
UNIT
V/ns
UNIT
°C/W
µC
nC
ns
pF
ns
µ
°
J
C