APT8020JFLL Microsemi Power Products Group, APT8020JFLL Datasheet

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APT8020JFLL

Manufacturer Part Number
APT8020JFLL
Description
MOSFET N-CH 800V 33A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT8020JFLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 16.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
195nC @ 10V
Input Capacitance (ciss) @ Vds
5200pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT8020JFLL
Manufacturer:
APT
Quantity:
15 500
Power MOS 7
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Q
along with exceptionally fast switching speeds inherent with Microsemi's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
R
V
BV
V
V
J
V
I
I
E
E
DS(on)
GS(th)
,T
I
I
DSS
GSS
P
GSM
T
DSS
DM
I
AR
D
GS
AR
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
g
. Power MOS 7
POWER MOS 7
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of low loss, high voltage, N-Channel
®
combines lower conduction and switching losses
1
1
(Repetitive and Non-Repetitive)
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
DS
Microsemi Website - http://www.microsemi.com
C
FAST RECOVERY BODY DIODE
= V
C
= 25°C
1
= 25°C
4
GS
GS
2
DS
, I
DS
®
= ±30V, V
GS
D
by significantly lowering R
(V
= 640V, V
= 800V, V
R
= 2.5mA)
= 0V, I
GS
FREDFET
= 10V, I
D
DS
GS
= 250µA)
GS
= 0V)
= 0V, T
= 0V)
D
= 16.5A)
All Ratings: T
C
= 125°C)
DS(ON)
800V
C
= 25°C unless otherwise specified.
MIN
800
3
APT8020JFLL
-55 to 150
ISOTOP
3000
33A 0.220
TYP
4.16
800
132
±30
±40
520
300
33
33
50
0.220
±100
1000
MAX
250
5
G
"UL Recognized"
file # E145592
Ohms
Amps
Watts
Amps
UNIT
Volts
Volts
W/°C
UNIT
Volts
Volts
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S

Related parts for APT8020JFLL

APT8020JFLL Summary of contents

Page 1

... 2.5mA Microsemi Website - http://www.microsemi.com 800V 33A 0.220 DS(ON) "UL Recognized" ISOTOP file # E145592 fi 25°C unless otherwise specified. C APT8020JFLL UNIT 800 Volts 33 Amps 132 ±30 Volts ±40 520 Watts 4.16 W/°C -55 to 150 300 Amps 33 50 3000 MIN TYP ...

Page 2

... Starting T = +25° 5.51mH numbers reflect the limitations of the test circuit rather than the dt device itself. 6 Eon includes diode reverse recovery. See figures 18, 20. SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT8020JFLL MIN TYP MAX 5200 1000 190 195 27 130 760 = 15V ...

Page 3

0.0528 0.0651 Dissipated Power (Watts) 0.0203 0.173 Z are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 2, TRANSIENT THERMAL IMPEDANCE ...

Page 4

... L = 100µ FIGURE 15, RISE AND FALL TIMES vs CURRENT 5000 V = 533V 38A 125°C 4000 100µH E includes ON diode reverse recovery. 3000 2000 1000 GATE RESISTANCE (Ohms) G FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE APT8020JFLL C iss C oss C rss =+25°C 0.7 0.9 1.1 1 off ...

Page 5

... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 APT8020JFLL 90% Gate Voltage t d(off) Drain Voltage 90 10% 0 Drain Current ...

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