APTM100UM65SAG Microsemi Power Products Group, APTM100UM65SAG Datasheet - Page 3

• Manufacturer Part Number: APTM100UM65SAG
• Description: MOSFET N-CH 1000V 145A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100UM65SAG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 5V @ 20mA
• Gate Charge (qg) @ Vgs: 1068nC @ 10V
• Input Capacitance (ciss) @ Vds: 28500pF @ 25V
• Power - Max: 3250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM100UM65SAGMI; APTM100UM65SAGMI

Parallel diode ratings and characteristics
SP6 Package outline
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
Symbol Characteristic
Thermal and package characteristics
Symbol Characteristic
Torque
V
V
R
T
I
Wt
V
Q
T
T
RRM
RM
ISOL
I
t
thJC
STG
rr
F
C
rr
J
F
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I sol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
Test Conditions
For teminals
To Heatsink
www.microsemi.com
V
I
I
I
I
V
di/dt = 800A/µs
F
F
F
F
R
R
= 240A
= 480A
= 240A
= 240A
=1000V
= 667V
Transistor
Series diode
Parallel diode
APTM100UM65SAG
T
T
T
T
T
T
T
Tc = 80°C
j
j
j
j
j
j
j
M6
M5
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
2500
Min
1000
-40
-40
-40
Min
3
2
Typ
3.04
14.4
Typ
240
280
350
2.2
1.7
2
0.038
Max
0.46
1000
0.23
Max
150
125
100
280
750
3.5
2.5
5
°C/W
Unit
Unit
N.m
µA
µC
A
ns
°C
V
V
V
g
3 – 6