APTM100UM65SAG Microsemi Power Products Group, APTM100UM65SAG Datasheet - Page 2

MOSFET N-CH 1000V 145A SP6

APTM100UM65SAG

Manufacturer Part Number
APTM100UM65SAG
Description
MOSFET N-CH 1000V 145A SP6
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM100UM65SAG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
78 mOhm @ 72.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
145A
Vgs(th) (max) @ Id
5V @ 20mA
Gate Charge (qg) @ Vgs
1068nC @ 10V
Input Capacitance (ciss) @ Vds
28500pF @ 25V
Power - Max
3250W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTM100UM65SAGMI
APTM100UM65SAGMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTM100UM65SAG
Manufacturer:
BROADCOM
Quantity:
1 760
Dynamic Characteristics
Series diode ratings and characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
R
V
T
V
T
I
I
C
C
C
Q
Q
E
E
E
E
I
DS(on)
GS(th)
Q
V
Q
DSS
d(off)
GSS
d(on)
T
T
RRM
RM
I
t
oss
iss
rss
on
off
on
off
rr
gd
F
gs
rr
g
r
f
F
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
All ratings @ T
j
= 25°C unless otherwise specified
Test Conditions
V
V
V
V
V
Test Conditions
V
V
f = 1MHz
V
V
I
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
Test Conditions
D
D
D
D
GS
GS
GS
GS
GS
GS
DS
GS
Bus
GS
Bus
G
GS
GS
= 145A
= 145A
= 145A, R
= 145A, R
= 0.75Ω
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V
I
I
I
I
V
di/dt = 400A/µs
= 0V,V
= 0V,V
= 10V, I
= V
= ±30 V, V
= 0V
= 25V
= 10V
= 15V
= 15V, V
= 15V, V
F
F
F
F
= 500V
= 500V
R
R
= 120A
= 240A
= 120A
= 120A
=200V
= 133V
DS
, I
DS
DS
D
= 1000V
= 800V
D
G
G
Bus
Bus
= 20mA
= 0.75Ω
= 0.75Ω
= 72.5A
DS
= 670V
= 670V
= 0V
APTM100UM65SAG
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
T
T
= 25°C
c
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
j
j
= 80°C
= 25°C
= 125°C
Min
Min
Min
200
3
1068
28.5
5.08
Typ
120
120
500
Typ
136
692
140
Typ
1.1
1.4
0.9
0.9
4.8
2.9
3.9
31
60
18
14
55
65
8
Max
±400
Max
Max
1.15
350
600
400
78
2
5
Unit
Unit
Unit
mΩ
µA
mA
nC
µA
nA
nF
nC
mJ
mJ
A
ns
V
V
ns
V
2 – 6

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