APTM100A13SG Microsemi Power Products Group, APTM100A13SG Datasheet - Page 3

• Manufacturer Part Number: APTM100A13SG
• Description: PWR MODULE MOSFET 1000V 65A SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100A13SG

• Fet Type: 2 N-Channel (Half Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 65A
• Vgs(th) (max) @ Id: 5V @ 6mA
• Gate Charge (qg) @ Vgs: 562nC @ 10V
• Input Capacitance (ciss) @ Vds: 15200pF @ 25V
• Power - Max: 1250W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APTM100A13SGMI; APTM100A13SGMI

Thermal and package characteristics
Parallel diode ratings and characteristics
Symbol Characteristic
Symbol Characteristic
Torque
SP6 Package outline
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
V
V
R
T
I
V
Q
T
Wt
T
RRM
RM
ISOL
I
t
STG
thJC
rr
F
C
rr
F
J
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
Test Conditions
V
I
I
I
I
V
di/dt = 400A/µs
F
F
F
F
R
R
= 120A
= 240A
= 120A
= 120A
=1000V
www.microsemi.com
= 667V
To heatsink
For terminals
Transistor
Diode series
Diode parallel
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
c
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 100°C
M6
M5
APTM100A13SG
1000
2500
Min
Min
-40
-40
-40
3
2
1520
7200
Typ
120
280
350
Typ
1.9
2.2
1.7
Max
Max
0.10
0.65
0.46
150
125
100
280
350
600
3.5
2.5
5
°C/W
Unit
Unit
N.m
µA
nC
A
ns
°C
V
V
V
g
3 – 6