APTM100A13SG Microsemi Power Products Group, APTM100A13SG Datasheet

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... Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APTM100A13SG ® MOSFETs DSon Max ratings Unit 1000 240 ±30 V 156 mΩ 1250 W 24 ...

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... Symbol Characteristic V Maximum Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr APTM100A13SG = 25°C unless otherwise specified j Test Conditions Min V = 0V,V = 1000V T = 25° 0V,V = 800V T = 125°C GS ...

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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100A13SG Test Conditions Min 1000 T = 25° =1000V 125° 100°C ...

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... V 7V 300 250µs pulse test @ < 0.5 duty cycle 6.5V 240 6V 180 120 5. Drain Current vs Case Temperature 70 60 =10V =20V 120 150 180 25 www.microsemi.com APTM100A13SG 0 Transfert Characteristics > I (on)xR (on)MAX =25° =125°C T =-55° Gate to Source Voltage ( 100 125 150 T , Case Temperature (° ...

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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS APTM100A13SG ON resistance vs Temperature 2.5 V =10V GS I =32.5A D 2.0 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

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... Switching Energy vs Gate Resistance off Source to Drain Diode Forward Voltage 1000 V =667V DS D=50% R =0.5Ω G 100 T =125° =75° ZVS 1 0.2 0.4 0.6 0 www.microsemi.com APTM100A13SG Rise and Fall times vs Current =667V DS R =0.5Ω =125° L=100µ 100 I , Drain Current ( =667V DS I =65A D T =125° ...