GA250TD120U Vishay, GA250TD120U Datasheet - Page 5

• Manufacturer Part Number: GA250TD120U
• Description: IGBT FAST 1200V 250A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA250TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 250A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 44.517nF @ 30V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Double INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: VS-GA250TD120U; VS-GA250TD120U; VSGA250TD120U; VSGA250TD120U

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Fig. 9 - Typical Switching Losses vs. Gate
80000
60000
40000
20000
200
180
160
140
120
100
80
0
0

( ° C)
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25
= 720V
= 15V
= 250A
125
R
V
R
10
G
CE
G

C oes
°
C ies
C res
, Gate Resistance
, Gate Resistance (Ohm)

C
V
C
C
C
, Collector-to-Emitter Voltage (V)

Resistance

GE
ies
res
oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
(
SHORTED
40
50
100
1000
100
10
Fig. 10 - Typical Switching Losses vs.
20
15
10
-60 -40 -20
5
0

R
R
V
V
0

Fig. 8 - Typical Gate Charge vs.
GE
CC
G1
V
G
I
CC
C
=15 ;R
= 15V
= 720V
= 15Ohm
= 400V
= 297A
Gate-to-Emitter Voltage
15
T , Junction Temperature ( C )
Junction Temperature
500
J
Q , Total Gate Charge (nC)
G
GA250TD120U
G2
0
= 0
20
1000
40
60
1500
80 100 120 140 160

I =

I =

I =
C
C
C
2000
°
500
250
125
A
A
A
5
2500