GA250TD120U Vishay, GA250TD120U Datasheet - Page 2

• Manufacturer Part Number: GA250TD120U
• Description: IGBT FAST 1200V 250A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA250TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 250A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 44.517nF @ 30V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Double INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: VS-GA250TD120U; VS-GA250TD120U; VSGA250TD120U; VSGA250TD120U

GA250TD120U
Electrical Characteristics @ T
Dynamic Characteristics - T
di
Details of note
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
CES
GES
d(on)
r
d(off)
f
rr
rr
(rec)
fe
V
on
(BR)CES
CE(on)
GE(th)
FM
off
ts
2
ies
oes
res
ge
gc
g
rr
GE(th)
M
/dt
/ T
J
Collector-to-Emitter Breakdown Voltage 1200
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage —
Forward Transconductance
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Q
through
Parameter
Parameter
b
T
are on the last page
J
= 125°C (unless otherwise specified)
J
T
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
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—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 44517 —
—
—
—
—
— 16540 —
—
1979 2968
1979
1970
323
334
655
731
227
653
343
108
383
214
155
-11
2.4
2.1
3.0
2.9
—
—
—
—
—
54
54
500
501
983
162
2.9
6.0
2.0
4.0
—
—
—
—
20
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
A/µs
mA
nA
mJ
nC
nC
ns
pF
ns
V
S
V
A
V
V
V
V
V
V
V
I
I
V
V
I
T
R
I
V
V
See Fig.17 through Fig.21
V
V
ƒ = 1 MHz
I
R
R
V
di/dt=1368A/µs
F
F
C
C
C
J
GE
GE
GE
CE
CE
CE
GE
GE
GE
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 250A, V
= 250A, V
= 297A
= 250A
= 250A
= 25°C
= 15
= 6V, I
= 6V, I
= 25V, I
= ±20V
= 15 , R
= 0
= 0V, I
= 15V, I
= 15V, I
= 0V, V
= 0V, V
= 400V, V
= ±15V
= 0V
= 30V
720V
720V
C
C
C
CE
CE
GE
C
C
C
GE
= 1mA
= 3 mA
= 3mA
Conditions
Conditions
G2
= 250A
= 250A
= 250A, T
GE
= 1200V
= 1200V, T
= 0V, T
= 0V
= 0
= 15V
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J
= 125°C
J
= 125°C
J
= 125°C