GA250TD120U Vishay, GA250TD120U Datasheet - Page 3

• Manufacturer Part Number: GA250TD120U
• Description: IGBT FAST 1200V 250A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA250TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 250A
• Current - Collector (ic) (max): 250A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 44.517nF @ 30V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Double INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: VS-GA250TD120U; VS-GA250TD120U; VSGA250TD120U; VSGA250TD120U

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1000
100
140
120
100
10
80
60
40
20
0
1.0
0.1
Fig. 2 - Typical Output Characteristics
S q u a re w a v e :

T = 125 C
J
V
CE
60 % of ra ted
1.5
°
Id e a l d io d e s
, Collector-to-Emitter Voltage (V)
I
vo ltag e

T = 25 C
J
2.0
°

Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
GE
= 15V
1
2.5
(Load Current = I
f, Frequency (KHz)
3.0
RMS
1000
of fundamental)
100
Fig. 3 - Typical Transfer Characteristics
10
1
5.0

T = 125 C
10
J
V
GE
°
GA250TD120U
, Gate-to-Emitter Voltage (V)
F o r b o th :
D u ty c y c le : 5 0 %
T = 1 2 5 ° C
T
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n =
6.0
J
sink

T = 25 C
J
= 9 0 ° C
°

V
80µs PULSE WIDTH
CE
175
7.0
= 25V
W
100
3
8.0