GA250TD120U Vishay, GA250TD120U Datasheet
GA250TD120U
Specifications of GA250TD120U
VS-GA250TD120U
VSGA250TD120U
VSGA250TD120U
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GA250TD120U Summary of contents
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... Storage Temperature Range STG Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com GA250TD120U 50054A Ultra-Fast Speed IGBT 1200 1200 CES ...
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... GA250TD120U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage 1200 (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage — GE(th Forward Transconductance fe I Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter ...
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... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com Frequency (KHz) (Load Current = I of fundamental) RMS 1000 T = 125 C 100 15V 1 2.5 3.0 5.0 Fig Typical Transfer Characteristics GA250TD120U ° ° C sink riv ifie tio 175 100 ° ° 25V CE 80µs PULSE WIDTH 6 ...
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... GA250TD120U 300 250 200 150 100 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0 0.5 0 0.2 0 0.10 0 .05 0.0 2 SING 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 15V PULSE WIDTH 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 Fig Typical Gate Charge vs. 1000 100 -60 -40 -20 ( Fig Typical Switching Losses vs. GA250TD120U = 400V = 297A 500 1000 1500 2000 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage 15 = 15Ohm = 15V = 720V 500 250 125 100 120 140 160 ° ...
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... GA250TD120U 250 R = 15Ohm 125 T = 150 C ° 720V 15V 200 GE 150 100 100 200 300 I , Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current ° 5° 1.0 2.0 3 lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 700 600 CE 500 400 300 ...
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... ° ° 500 800 1100 1400 / /µs) Fig Typical Reverse Recovery vs. di www.irf.com 250 I = 500A 250A F 200 I = 125A F 150 100 50 1700 2000 /dt Fig Typical Recovery Current vs GA250TD120U I = 500A 250 125A ° ° 500 800 1100 1400 1700 /µs) f 2000 / ...
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... GA250TD120U Fig Test Circuit for Measurement off(diode d(on Fig Test Waveforms for Circuit of Fig. 17, Defining d(on ff d(off) f Fig Test Waveforms for Circuit of Fig. 17, Defining Vce Fig µ S Vce d(off) f trr trr Irr Irr Test Waveforms for Circuit of Fig. 17, Defining rec www ...
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... Figure 21. Macro Waveforms for µ Figure 22. Clamped Inductive Load Test Circuit www.irf.com Figure 17's L D.U. 600V Figure 23. Pulsed Collector Current GA250TD120U Test Circuit 600V @25°C C Test Circuit 9 ...
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... GA250TD120U Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M5x0.8 T Pulse width 80µs; single shot. Case Outline — DOUBLE INT-A-PAK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...