GA150TD120U Vishay, GA150TD120U Datasheet - Page 8

• Manufacturer Part Number: GA150TD120U
• Description: IGBT FAST 1200V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 25.63nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA150TD120U
Fig. 19 -
8
I
Fig. 17 -
LM
V c c
, E
td(on)
on
10% + V g
10% Ic
, E
Test Waveforms for Circuit of Fig. 17,
off(diode)
Test Circuit for Measurement of
t1
Defining E
V c e
, t
tr
rr
, Q
5% V c e
on
rr
, I
90% Ic
, t
rr
d(on)
, t
G A T E V O LT A G E D .U .T .
+V g
d(on)
, t
r
, t
r
, t
t2
E on =
D U T V O LT A G E
A N D C U R R E N T
Ipk
d(off)
Vce Ic dt
t1
, t
V c e ie dt
Vce Ic dt
t2
f
Fig. 18 -
Ic
Test Waveforms for Circuit of Fig. 17, Defining E
Fig. 20 -
+V ge
Ic
td (off)
10% V ce
V pk
D IO D E R E V E R S E
R E C O V E R Y E N E R G Y
Ic
Test Waveforms for Circuit of Fig. 17,
10% V c c
tx
Defining E
t1
t
Irr
d(off)
V ce
, t
90% V ge
t3
f
Ic
rec
trr
tf
, t
rr
, Q
t2
90% Ic
rr
, I
D IO D E R E C O V E R Y
W A V E F O R M S
t4
E off =
E rec =
rr
www.irf.com
5% Ic
10% Irr
Vd Ic dt
Q rr =
t1
t3
Vce Ic dt
V ce ic dt
V d id dt
Ic dt
Vd Ic dt
t1+5µ S
t4
tx
id dt
Ic dt
trr
V c c
off
,