GA150TD120U Vishay, GA150TD120U Datasheet - Page 6

• Manufacturer Part Number: GA150TD120U
• Description: IGBT FAST 1200V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 25.63nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

GA150TD120U
6
150
125
100
75
50
25
Fig. 13 - Typical Forward Voltage Drop vs.
1 0 0 0
Fig. 11 - Typical Switching Losses vs.
1 0 0
0
1 0
0
R
1.0
R
T
V
V
G1
CC
GE
G
J
F o rwa rd Vo lta g e D ro p - V
=15 ;R
Instantaneous Forward Current
Collector-to-Emitter Current
= 150 C
50
= 720V
= 15V
= 15Ohm
I
°
C
2.0
100
G2
, Collector Current (A)
= 0
150
3.0
T = 1 25°C
T =
J
J
200
FM
25 °C
(V )
250
4.0
300
350
Fig. 14 - Typical Stored Charge vs. di
25000
20000
15000
10000
4 0 0
3 0 0
2 0 0
1 0 0
5000
0
0
0
500
V
T
V
G E
J
C E
Fig. 12 - Reverse Bias SOA
V
CE
= 20V
= 125°C
m easured at term inal (Peak Voltage)
2 0 0
, Collector-to-Em itter Voltage (V)
I = 150A
I = 300A
800
I = 75A
F
F
F
SAFE OPERATING AREA
4 0 0
di /dt - (A/µ s )
1100
6 0 0
f
8 0 0
1400
V = 7 20V
T = 1 2 5 °C
T = 2 5 °C
R
J
J
www.irf.com
1 0 0 0
1700
1 2 0 0
f
/dt
2000
1 4 0 0
A