GA150TD120U Vishay, GA150TD120U Datasheet - Page 5

• Manufacturer Part Number: GA150TD120U
• Description: IGBT FAST 1200V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 25.63nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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Fig. 9 - Typical Switching Losses vs. Gate
50000
40000
30000
20000
10000
100
90
80
70
60
50
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25
= 720V
= 15V
= 150A
C ies
C oes
C res
125
R
R
V
10
G
CE
G
°
, Gate Resistance
, Gate Resistance (Ohm)
V
C
C
C
C
Resistance
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
40
SHORTED
50
100
1000
100
10
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
20
15
10
5
0
R
R
V
V
0
GE
CC
G
G1
Fig. 8 - Typical Gate Charge vs.
V
I
CC
C
=15 ;R
= 15V
= 960V
= 15Ohm
= 400V
= 171A
720V
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
200
15
Junction Temperature
J
Q , Total Gate Charge (nC)
G
G2
0
GA150TD120U
= 0
400
20
40
600
60
80 100 120 140 160
800
I =
I =
I =
C
C
C
°
1000
300
150
75
A
A
A
5
1200