GA150TD120U Vishay, GA150TD120U Datasheet - Page 3

• Manufacturer Part Number: GA150TD120U
• Description: IGBT FAST 1200V 150A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA150TD120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 150A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 2mA
• Input Capacitance (cies) @ Vce: 25.63nF @ 30V
• Power - Max: 780W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -

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1000
100
10
120
100
80
60
40
20
1.0
0
Fig. 2 - Typical Output Characteristics
0.1
T = 125 C
S q u a re w a v e:
J
V
CE
1.5
, Collector-to-Emitter Voltage (V)
60% of rated
°
Ide a l d io d e s
I
v oltage
2.0
T = 25 C
J
Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
GE
°
= 15V
2.5
(Load Current = I
1
3.0
f, Frequency (KHz)
RMS
1000
of fundamental)
100
Fig. 3 - Typical Transfer Characteristics
10
1
5
V
10
GE
GA150TD120U
, Gate-to-Emitter Voltage (V)
6
T = 125 C
J
F or b oth:
D uty c y c le : 50 %
T = 12 5° C
T
G a te d riv e a s s pe c ified
P ow er D is s ipation =
T = 25 C
J
sink
J
°
V
5µs PULSE WIDTH
= 90 °C
CC
°
7
= 50V
25V
134
W
100
3
8