GA100TS120U Vishay, GA100TS120U Datasheet - Page 6

• Manufacturer Part Number: GA100TS120U
• Description: IGBT FAST 1200V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 18.672nF @ 30V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Supplier Unconfirmed

GA100TS120U
6
Fig. 13 - Typical Forward Voltage Drop vs.
80
60
40
20
Fig. 11 - Typical Switching Losses vs.
0
1 0 0 0
1 0 0
0
1 0
R
R
T
V
V
0.0
CC
GE
G
J
G1
Forward Voltage Drop - V
Instantaneous Forward Current
F o rw a rd Vo lta g e D ro p - V
=15 ;R
= 150 C
= 720V
= 15V
= Ohm
1.0
25
I
T = 125°C
T = 25°C
Collector Current
50
J
J
°
C
G2
, Collector Current (A)
2.0
= 0
3.0
100
4.0
F M
FM
(V )
(V)
150
5.0
200
16000
12000
Fig. 14 - Typical Stored Charge vs. di
8000
4000
300
200
100
0
0
400
0
V
T
V meas ured at terminal (Peak V oltage)
GE
J
J
CE
GE
Fig. 12 - Reverse Bias SOA
SA FE OPERA TING A REA
V
I = 100A
I = 50A
I = 200A
F
F
F
CE
= 125°C
= 20V
, C o lle c to r -to -E m itte r Vo lta g e (V)
300
800
di /dt - (A/µ s)
600
f
1200
V = 7 20V
T = 1 25 °C
T = 2 5°C
900
R
J
J
www.irf.com
1600
1200
f
/dt
2000
1500
A