GA100TS120U Vishay, GA100TS120U Datasheet - Page 3

• Manufacturer Part Number: GA100TS120U
• Description: IGBT FAST 1200V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 18.672nF @ 30V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Supplier Unconfirmed

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100
1000
75
50
25
100
0
10
0.1
Fig. 2 - Typical Output Characteristics
1.0
S q u a re w a v e :
V
CE
60% of rated
T = 125 C
J
Id e a l d io d e s
, Collector-to-Emitter Voltage (V)
I
v oltage
2.0
°
T = 25 C
J
Fig. 1 - Typical Load Current vs. Frequency
V
80µs PULSE WIDTH
GE
°
3.0
(Load Current = I
= 15V
1
4.0
f, Frequency (KHz)
RMS
of fundamental)
1000
100
10
Fig. 3 - Typical Transfer Characteristics
1
5
V
GE
10
, Gate-to-Emitter Voltage (V)
T = 125 C
J
6
F or b oth:
D uty cycle : 50 %
T = 12 5° C
T
G a te d rive a s spe cified
P ow er D is s ipation =
J
sink
GA100TS120U
°
= 90 °C
V
5µs PULSE WIDTH
CC
7
T = 25 C
= 50V
J
170
W
°
3
100
8