GA100TS120U Vishay, GA100TS120U Datasheet - Page 10

• Manufacturer Part Number: GA100TS120U
• Description: IGBT FAST 1200V 100A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA100TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.9V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 18.672nF @ 30V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 100A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Supplier Unconfirmed

Case Outline — INT-A-PAK
GA100TS120U
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
Notes:
10
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
See fig. 17
Repetitive rating; V
max. junction temperature.
For screws M5x0.8
Pulse width 50µs; single shot.
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: [phone]
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: [phone]
GE
= 20V, pulse width limited by
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: [phone]
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
Data and specifications subject to change without notice. 4/00
Dimensions are shown in millimeters (inches)
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