GA100TS120U Vishay, GA100TS120U Datasheet
GA100TS120U
Specifications of GA100TS120U
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GA100TS120U Summary of contents
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... STG Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com PD - 50060B GA100TS120U Ultra-Fast Speed IGBT 1200 CES V = 2.4V CE (on) typ 15V @V = ...
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... GA100TS120U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...
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... Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 ° 15V 1 3.0 4.0 5 Fig Typical Transfer Characteristics GA100TS120U oth: D uty cycle : 5° °C sink rive a s spe cified ipation = 170 W 10 ° 125 C J ° ...
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... GA100TS120U 120 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0. 0.01 ( 0.01 0.0001 0.001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 4 15V PULSE WIDTH 3.0 2.0 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs ...
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... CC C SHORTED I = 113A 100 0 Fig Typical Gate Charge vs. 1000 Ohm 15V 720V CC 100 -60 -40 -20 Fig Typical Switching Losses vs. GA100TS120U 300 600 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 200 100 100 120 140 160 ° Junction Temperature ( Junction Temperature 900 5 ...
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... GA100TS120U = Ohm = 150 C 25 ° 720V 15V 100 I , Collector Current (A) C Fig Typical Switching Losses vs. Collector Current 125° 25° 0.0 1.0 2.0 3.0 4 lta Forward Voltage Drop - Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 300 meas ured at terminal (Peak V oltage) ...
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... Fig Typical Reverse Recovery vs. di www.irf.com 250 200 I = 200A 100A 200A 50A 100A F 150 I = 50A F 100 50 0 1600 2000 400 /dt Fig Typical Recovery Current vs GA100TS120U 5° °C J 800 1200 1600 2000 di /dt - (A/µ / ...
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... GA100TS120U Fig. 17a - Test Circuit for Measurement off(diode d( td(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on 10 (off d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Ipk Ic t2 Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a, ...
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... Figure 17e. Macro Waveforms for L 1000V 50V 600 0µ F 100 V Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 480V Figure 19. Pulsed Collector Current GA100TS120U Test Circuit 480V @25°C C Test Circuit 9 ...
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... GA100TS120U Notes: Repetitive rating 20V, pulse width limited by GE max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50µs; single shot. Case Outline — INT-A-PAK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...