APTGT100H120G Microsemi Power Products Group, APTGT100H120G Datasheet - Page 5

• Manufacturer Part Number: APTGT100H120G
• Description: IGBT MOD TRENCH FULL BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100H120G

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 140A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
60
50
40
30
20
10
0.5
0.4
0.3
0.2
0.1
0.00001
0
0
0
Operating Frequency vs Collector Current
switching
Hard
0.05
0.9
0.7
0.5
0.1
ZCS
0.3
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
40
ZVS
0.0001
60
I
C
(A)
80
V
D=50%
R
T
Tc=75°C
J
CE
G
=125°C
100
=3.9 Ω
=600V
120
0.001
rectangular Pulse Duration (Seconds)
140
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Single Pulse
0.01
200
150
100
50
0
0
APTGT100H120G
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
F
(V)
1
T
J
=25°C
1.6
Diode
T
J
=125°C
2
2.4
10
5 - 5