APTGT100H120G Microsemi Power Products Group, APTGT100H120G Datasheet - Page 4

• Manufacturer Part Number: APTGT100H120G
• Description: IGBT MOD TRENCH FULL BRIDGE SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100H120G

• Igbt Type: Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 140A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 7.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
200
150
100
200
175
150
125
100
25
20
15
10
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
50
75
50
25
5
0
0.3
0.2
0.1
0
0
0.00001
0
0
0
5
V
T
V
I
CE
C
J
GE
0.9
= 125°C
0.7
0.5
Output Characteristics (V
= 100A
0.3
0.1
T
= 600V
J
6
=15V
0.05
=125°C
Transfert Characteristics
5
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
7
J
=25°C
10
0.0001
V
8
V
CE
GE
2
(V)
T
(V)
J
=25°C
9
15
T
10
GE
J
=125°C
T
3
J
=15V)
20
=125°C
rectangular Pulse Duration (Seconds)
Eon
0.001
Eoff
11
Er
Single Pulse
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25
12
4
IGBT
0.01
240
200
160
120
200
150
100
25
20
15
10
80
40
50
5
0
0
0
0
0
0
APTGT100H120G
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
J
CE
GE
G
J
GE
T
G
= 125°C
25
0.1
=125°C
= 3.9 Ω
=3.9 Ω
= 600V
J
= 15V
Eon
=15V
= 125°C
300
50
1
Output Characteristics
75 100 125 150 175 200
V
600
GE
=17V
V
V
CE
I
CE
2
C
(V)
1
(A)
900
(V)
V
GE
1200
3
V
=15V
GE
V
Eon
GE
=13V
=9V
Eoff
Er
1500
10
4
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