APTGT200DA170D3G Microsemi Power Products Group, APTGT200DA170D3G Datasheet - Page 2

• Manufacturer Part Number: APTGT200DA170D3G
• Description: IGBT 1700V 400A 1250W D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT200DA170D3G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 200A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 17nF @ 25V
• Power - Max: 1250W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
V
T
T
T
T
R
T
I
I
C
C
E
CE(on)
Wt
GE(th)
V
Q
T
CES
GES
T
d(off)
T
T
d(off)
T
E
T
d(on)
d(on)
ISOL
STG
thJC
res
off
ies
CES
C
F
rr
J
r
f
r
f
r
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn Off Energy
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
All ratings @ T
APT website – http://www.advancedpower.com
j
= 25°C unless otherwise specified
V
Test Conditions
I
V
I
V
di/dt =900A/µs
I
V
di/dt =900A/µs
Test Conditions
V
V
I
V
V
Test Conditions
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
C
C
C
F
F
F
For terminals
GE
To Heatsink
G
G
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
R
R
= 200A
= 200A
= 200A
= 200A
= 200A
= 200A
= 6.8Ω
= 6.8Ω
= 900V
= 900V
= 0V, V
= 0V
= 0V, I
= 15V
= V
= 20V, V
= 0V, V
= 15V
= 15V
= 900V
= 900V
CE
, I
C
CE
CE
= 7mA
C
CE
= 1700V
= 8 mA
= 25V
APTGT200DA170D3
= 0V
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
= 25°C
Diode
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
IGBT
M6
M6
3500
Min
Min
1700
Min
Min
-40
-40
-40
5.2
3
3
1000
Typ
Typ
Typ
Typ
250
100
850
120
300
100
200
1.8
1.9
2.0
2.4
5.8
0.6
25
50
50
85
17
65
Max
0.10
0.16
Max
Max
Max
150
125
125
380
400
2.2
2.4
6.4
5
5
5
Unit
°C/W
Unit
N.m
Unit
Unit
mA
mJ
µC
°C
nA
mJ
nF
V
ns
ns
V
V
V
V
g
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