APTGT200DA170D3G Microsemi Power Products Group, APTGT200DA170D3G Datasheet
APTGT200DA170D3G
Manufacturer Part Number
APTGT200DA170D3G
Description
IGBT 1700V 400A 1250W D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT200DA170D3G.pdf
(3 pages)
Specifications of APTGT200DA170D3G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 200A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
17nF @ 25V
Power - Max
1250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
Trench IGBT
V
V
I
P
I
CM
CES
C
GE
D
4
5
7
6
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operation Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
Boost chopper
6
7
Parameter
Q2
®
2
Power Module
APT website – http://www.advancedpower.com
1
3
2
1
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
•
•
•
•
•
•
•
•
•
•
•
•
•
•
400A@1650V
APTGT200DA170D3
Max ratings
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Trench + Field Stop IGBT
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
1700
1250
400
200
600
-
-
-
-
-
-
-
-
-
20
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
M6 power connectors
CES
= 200A @ Tc = 80°C
= 1700V
Unit
W
V
A
V
®
Technology
1 - 3
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APTGT200DA170D3G Summary of contents
Page 1
Boost chopper ® Trench IGBT Power Module Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current CM V Gate ...
Page 2
All ratings @ T Electrical Characteristics Symbol Characteristic BV Collector - Emitter Breakdown Voltage CES I Zero Gate Voltage Collector Current CES V Collector Emitter on Voltage CE(on) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES ...
Page 3
Package outline APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 ...