APTGT75H120TG Microsemi Power Products Group, APTGT75H120TG Datasheet - Page 5
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APTGT75H120TG
Manufacturer Part Number
APTGT75H120TG
Description
IGBT MOD TRENCH FULL BRIDGE SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT75H120TG.pdf
(5 pages)
Specifications of APTGT75H120TG
Igbt Type
Trench and Field Stop
Configuration
Full Bridge Inverter
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
5.34nF @ 25V
Power - Max
357W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APTGT75H120TG
Manufacturer:
FREESCALE
Quantity:
101
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.6
0.5
0.4
0.3
0.2
0.1
60
50
40
30
20
10
0.00001
0
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
Hard
0.3
0.1
20
ZCS
ZVS
maximum Effective Transient Thermal Impedance, Junction to case vs Pulse Duration
40
0.0001
I
C
60
(A)
V
D=50%
R
T
T
80
CE
J
c
G
=125°C
=75°C
=4.7Ω
=600V
100
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
120
Single Pulse
0.01
150
125
100
75
50
25
0
APTGT75H120TG
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
V
1.2
F
(V)
T
1
J
=25°C
1.6
Diode
T
J
2
=125°C
2.4
10
5 - 5