APTGT75H120TG Microsemi Power Products Group, APTGT75H120TG Datasheet
APTGT75H120TG
Specifications of APTGT75H120TG
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APTGT75H120TG Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT75H120TG V ® I Application • Welding converters • Switched Mode Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75H120TG = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 75A T = 125°C C ...
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... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTGT75H120TG R T: Thermistor temperature 25 Thermistor value at T ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGT75H120TG =15V) GE 150 T 125 T =125°C J 100 Energy losses vs Collector Current =25°C ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT75H120TG Forward Characteristic of diode 150 ...