APTGT150A120TG Microsemi Power Products Group, APTGT150A120TG Datasheet - Page 5

• Manufacturer Part Number: APTGT150A120TG
• Description: IGBT MODULE TRENCH PHASE LEG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150A120TG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.7nF @ 25V
• Power - Max: 690W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.35
0.25
0.15
0.05
60
50
40
30
20
10
0
0.3
0.2
0.1
0.00001
10
0
Operating Frequency vs Collector Current
Switching
ZCS
Hard
0.9
0.05
0.7
0.5
40
0.3
0.1
ZVS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
70
100
0.0001
I
C
(A)
130
160
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=2.2 Ω
=600V
190
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
220
Single Pulse
0.01
300
250
200
150
100
50
APTGT150A120TG
0
0
Forward Characteristic of diode
0.1
0.4
T
J
=125°C
0.8
1.2
V
T
F
J
(V)
=25°C
1
1.6
Diode
T
J
=125°C
2
2.4
10
5 - 5