APTGT150A120TG Microsemi Power Products Group, APTGT150A120TG Datasheet - Page 4

• Manufacturer Part Number: APTGT150A120TG
• Description: IGBT MODULE TRENCH PHASE LEG SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150A120TG

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector (ic) (max): 220A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.7nF @ 25V
• Power - Max: 690W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
40
35
30
25
20
15
10
0.16
0.12
0.08
0.04
Switching Energy Losses vs Gate Resistance
50
50
0.2
5
0
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
GE
J
= 150A
= 125°C
0.05
= 600V
0.9
0.7
0.3
T
=15V
0.5
0.1
Output Characteristics (V
2
J
=125°C
6
Transfert Characteristics
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4
1
7
T
J
=25°C
6
0.0001
8
V
V
CE
GE
8
2
(V)
T
(V)
J
=25°C
9
10
T
10
J
12
GE
=125°C
T
3
J
=15V)
=125°C
rectangular Pulse Duration (Seconds)
0.001
11
14
Eon
Eoff
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Er
16
12
4
Single Pulse
IGBT
0.01
350
300
250
200
150
100
300
250
200
150
100
40
30
20
10
50
50
0
0
0
APTGT150A120TG
0
0
0
V
T
R
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
V
T
R
V
J
GE
G
T
0.1
CE
=125°C
J
GE
G
=2.2 Ω
J
= 125°C
=15V
50
= 2.2 Ω
= 125°C
= 600V
= 15V
400
1
Output Characteristics
100
Eoff
V
I
C
V
GE
150
800
V
CE
(A)
=17V
CE
2
(V)
1
(V)
200
1200
V
GE
3
V
=15V
V
250
GE
GE
Eon
=13V
=9V
Er
1600
10
300
4
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