APTGT75A120T1G Microsemi Power Products Group, APTGT75A120T1G Datasheet - Page 4

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APTGT75A120T1G

Manufacturer Part Number
APTGT75A120T1G
Description
IGBT MOD TRENCH PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGT75A120T1G

Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
110A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
5.34nF @ 25V
Power - Max
357W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
150
125
100
150
125
100
16
14
12
10
0.35
0.25
0.15
0.05
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
8
6
4
2
0
0.4
0.3
0.2
0.1
0
0.00001
0
0
0
0
5
V
V
I
T
C
CE
GE
J
= 75A
= 125°C
Output Characteristics (V
= 600V
=15V
4
0.1
T
0.9
0.3
0.7
0.5
0.05
J
6
=125°C
Transfert Characteristics
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
8
1
T
7
J
=25°C
12
0.0001
8
V
V
CE
16
GE
2
(V)
T
(V)
J
=25°C
9
20
T
10
GE
J
24
=125°C
T
3
Eon
=15V)
J
rectangular Pulse Duration (Seconds)
=125°C
0.001
11
28
www.microsemi.com
Eoff
Er
Single Pulse
32
12
4
IGBT
0.01
175
150
125
100
150
125
100
16
14
12
10
75
50
25
75
50
25
APTGT75A120T1G
8
6
4
2
0
0
0
0
0
0
V
V
R
T
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
GE
J
T
G
= 125°C
0.1
=125°C
= 4.7Ω
=4.7Ω
J
= 600V
= 15V
=15V
25
= 125°C
400
1
Output Characteristics
50
Eoff
I
V
C
800
V
V
75
CE
(A)
GE
CE
2
=17V
(V)
1
(V)
100
1200
3
Eon
V
V
V
125
GE
GE
GE
=15V
=13V
=9V
Er
1600
10
150
4
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