APTGT75A120T1G Microsemi Power Products Group, APTGT75A120T1G Datasheet
APTGT75A120T1G
Specifications of APTGT75A120T1G
Related parts for APTGT75A120T1G
APTGT75A120T1G Summary of contents
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... NTC 4 • 12 • • Benefits • • • • • • Parameter www.microsemi.com APTGT75A120T1G V = 1200V CES I = 75A @ Tc = 80°C C Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control ® Fast Trench + Field Stop IGBT Technology - Low voltage drop ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75A120T1G = 25°C unless otherwise specified j Test Conditions 1200V 25°C V =15V 75A T = 125°C C ...
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... T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGT75A120T1G Min Typ Max IGBT 0.35 Diode 0.58 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N ...
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... V ( =25° =125° (V) GE 175 Eon 150 125 Eoff 100 IGBT Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT75A120T1G Output Characteristics T = 125°C V =17V =13V GE V =15V = (V) CE Energy losses vs Collector Current V = 600V 15V 4.7Ω 125°C ...
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... U.S and Foreign patents pending. All Rights Reserved. V =600V CE D=50% R =4.7Ω =125° =75° 100 120 I (A) C Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) www.microsemi.com APTGT75A120T1G Forward Characteristic of diode 150 T =25°C 125 J 100 T =125° =125° 0.4 0.8 1.2 1 (V) ...