APTGV75H60T3G Microsemi Power Products Group, APTGV75H60T3G Datasheet - Page 6

• Manufacturer Part Number: APTGV75H60T3G
• Description: IGBT NPT BST CHOP FULL BRDG SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV75H60T3G

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.62nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6.2 Top Fast diode typical performance curves
150
125
100
5
4
3
2
1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
75
50
25
0.00001
0
0
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.00001
5
0
0.9
0.7
0.5
0.3
5
0.1
0.05
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
T
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6
Transfert Characteristics
J
=125°C
Gate Resistance (ohms)
10
0.9
0.3
0.7
0.5
0.1
0.05
Eon
T
7
J
=150°C
15
0.0001
0.0001
8
V
T
20
GE
J
=25°C
(V)
T
9
25
J
=25°C
Eoff
200
160
120
V
V
I
T
80
40
C
10
CE
GE
J
0
= 75A
30
= 150°C
0.0
= 300V
Rectangular Pulse Duration (Seconds)
=15V
Forw ard Current vs Forw ard Voltage
www.microsemi.com
Rectangular Pulse Duration in Seconds
0.001
0.001
V
11
35
F
T
, Anode to Cathode Voltage (V)
J
0.5
=25°C
Single Pulse
40
12
T
T
J
=1 25°C
J
=1 75°C
1.0
Single Pulse
0.01
0.01
1.5
T
2.0
175
150
125
100
J
5
4
3
2
1
0
=-55°C
75
50
25
0
0
0
V
V
R
T
CE
GE
G
J
V
T
R
2.5
Energy losses vs Collector Current
= 150°C
Reverse Bias Safe Operating Area
0.1
APTGV75H60T3G
= 4.7Ω
GE
J
G
= 300V
= 15V
0.1
=150°C
100
25
=4.7Ω
=15V
3.0
200
50
300
I
C
V
75
(A)
CE
1
400
(V)
1
100
500
Eoff
125
600
Eon
10
10
150
700
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