APTGV75H60T3G Microsemi Power Products Group, APTGV75H60T3G Datasheet
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APTGV75H60T3G
Specifications of APTGV75H60T3G
Related parts for APTGV75H60T3G
APTGV75H60T3G Summary of contents
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... Solderable terminals both for power and signal 14 for easy PCB mounting 13 • Low profile • Easy paralleling due to positive T • RoHS Compliant www.microsemi.com APTGV75H60T3G ® IGBT Q1, Q3: = 75A @ Tc = 80° 60A @ Tc = 80° Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current ® ...
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... Turn-on Delay Time d(on) T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off R Junction to Case Thermal resistance thJC APTGV75H60T3G = 25°C unless otherwise specified j ® characteristics Parameter T = 25° 80° 25° 25° 150°C ...
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... 60A 60A 400V R di/dt =200A/µs Parameter Test Conditions 600V CE V =15V 60A 2mA 20V www.microsemi.com APTGV75H60T3G Min Typ Max 600 T = 25° 125°C 500 80°C 60 1.7 2 125°C 1 25° 125°C 140 25°C 100 125°C 690 j ...
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... R T: Thermistor temperature 25 Thermistor value − B 25 www.microsemi.com APTGV75H60T3G Min Typ Max 2700 386 240 198 20 120 125°C 0 125°C 1.6 j 0.45 Min Typ Max ...
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... To heatsink 17 12 ® typical performance curves =15V) GE 150 125 100 T =150° =25° 1 (V) CE www.microsemi.com APTGV75H60T3G Min Typ Max 2500 -40 150* -40 125 -40 100 M4 2.5 4.7 110 Output Characteristics V =19V T = 150° =13V GE V =15V 0.5 1 1 ...
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... Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0.05 0 0.00001 0.0001 APTGV75H60T3G Energy losses vs Collector Current 300V 15V 4.7Ω 150° ...
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... Duty cycle Gate to Emitter Voltage (V) GE Breakdown Voltage vs Junction Temp. 1.20 1.10 1.00 0.90 0.80 0.70 -50 - Junction Temperature (°C) J APTGV75H60T3G =15V) Output Characteristics (V 200 250µs Pulse Test < 0.5% Duty cycle 150 T =25°C J 100 T =125° Collector to Emitter Voltage ( 30A 25°C J ...
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... CE Switching Energy Losses vs Gate Resistance 2 Eoff, 60A 1.5 1 Eon, 60A V = 400V 0 15V 125° Gate Resistance (Ohms) www.microsemi.com APTGV75H60T3G Turn-Off Delay Time vs Collector Current 125 100 75 V =15V =25° 400V 3.3Ω Collector to Emitter Current (A) CE Current Fall Time vs Collector Current ...
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... Forw ard Current vs Forw ard Voltage 25° =25° 0.0 0.5 1.0 1.5 2 Anode to Cathode Voltage (V) F Single Pulse 0.0001 0.001 0.01 Rectangular Pulse Duration (Seconds) www.microsemi.com APTGV75H60T3G Operating Frequency vs Collector Current V = 400V 50 3.3Ω 125° 75°C C ZCS ZVS hard switching 100 I , Collector Current ( =-55° ...