APT40GF120JRDQ2 Microsemi Power Products Group, APT40GF120JRDQ2 Datasheet - Page 4

• Manufacturer Part Number: APT40GF120JRDQ2
• Description: IGBT 1200V 77A 347W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT40GF120JRDQ2

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 40A
• Current - Collector (ic) (max): 77A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 3.46nF @ 25V
• Power - Max: 347W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
I
I
CE
CE
I
CE
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C or 125°C
= 1.0Ω
=
= 800V
R
1.0Ω, L
T
G
J
, GATE RESISTANCE (OHMS)
=
25 or 125°C,V
=
V
100
GE
µ
H, V
= 15V
CE
GE
=
=
800V
15V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
V
=
T
GE
=
J
1.0Ω
, JUNCTION TEMPERATURE (°C)
800V
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C