APT40GF120JRDQ2 Microsemi Power Products Group, APT40GF120JRDQ2 Datasheet - Page 3

• Manufacturer Part Number: APT40GF120JRDQ2
• Description: IGBT 1200V 77A 347W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT40GF120JRDQ2

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 40A
• Current - Collector (ic) (max): 77A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 3.46nF @ 25V
• Power - Max: 347W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
0
0
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
T
J
2
, GATE-TO-EMITTER VOLTAGE (V)
J
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
T
1
T
= 125°C
J
J
T
= -55°C
= 125°C
10
T
J
0
= 25°C
J
4
T
= -55°C
J
2
= 25°C
25
6
12
50
3
8
75
4
10
100 125 150
14
5
J
12
= 25°C)
16
14
6
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
180
160
140
120
100
120
100
80
60
40
20
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
5
4
3
2
1
0
0
-50
V
0
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 40A
-25
50
V
25
T
GE
T
C
J
= 15V.
100 150 200 250 300 350 400
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
5
0
GATE CHARGE (nC)
V
50
V
15V
CE
25
CE
13V
= 600V
= 240V
12V
10
75
50
11V
75 100 125 150
100
15
V
CE
9V
125
J
8V
= 960V
= 125°C)
150
20