APTGT35A120T1G Microsemi Power Products Group, APTGT35A120T1G Datasheet - Page 5

• Manufacturer Part Number: APTGT35A120T1G
• Description: IGBT MOD TRENCH PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT35A120T1G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 35A
• Current - Collector (ic) (max): 55A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 208W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.6
0.4
0.2
80
70
60
50
40
30
20
10
0.00001
0
1
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
0.3
0.1
hard
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
0.0001
ZCS
I
C
ZVS
30
(A)
40
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=27Ω
=600V
0.001
50
rectangular Pulse Duration (Seconds)
www.microsemi.com
60
Single Pulse
0.01
70
60
50
40
30
20
10
APTGT35A120T1G
0
0
Forward Characteristic of diode
0.1
T
0.5
J
=125°C
1
V
F
(V)
T
1.5
1
J
=25°C
Diode
T
2
J
=125°C
2.5
10
5 – 5