APTGT35A120T1G Microsemi Power Products Group, APTGT35A120T1G Datasheet - Page 5
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APTGT35A120T1G
Manufacturer Part Number
APTGT35A120T1G
Description
IGBT MOD TRENCH PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT35A120T1G.pdf
(5 pages)
Specifications of APTGT35A120T1G
Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 35A
Current - Collector (ic) (max)
55A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.5nF @ 25V
Power - Max
208W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.6
0.4
0.2
80
70
60
50
40
30
20
10
0.00001
0
1
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
0.3
0.1
hard
10
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
20
0.0001
ZCS
I
C
ZVS
30
(A)
40
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=27Ω
=600V
0.001
50
rectangular Pulse Duration (Seconds)
www.microsemi.com
60
Single Pulse
0.01
70
60
50
40
30
20
10
APTGT35A120T1G
0
0
Forward Characteristic of diode
0.1
T
0.5
J
=125°C
1
V
F
(V)
T
1.5
1
J
=25°C
Diode
T
2
J
=125°C
2.5
10
5 – 5