APTGT35A120T1G Microsemi Power Products Group, APTGT35A120T1G Datasheet - Page 4
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APTGT35A120T1G
Manufacturer Part Number
APTGT35A120T1G
Description
IGBT MOD TRENCH PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT35A120T1G.pdf
(5 pages)
Specifications of APTGT35A120T1G
Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 35A
Current - Collector (ic) (max)
55A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
2.5nF @ 25V
Power - Max
208W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
0
0
0.00001
20
0
0
5
V
V
I
T
C
J
CE
GE
= 35A
= 125°C
= 600V
=15V
0.9
0.5
0.3
0.1
0.05
0.7
Output Characteristics (V
0.5
6
Transfert Characteristics
Eon
Gate Resistance (ohms)
40
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
7
0.0001
1.5
V
V
T
CE
60
J
GE
=25°C
8
(V)
(V)
T
T
2
J
J
=25°C
=25°C
9
2.5
80
GE
T
T
J
=15V)
Eon
J
=125°C
rectangular Pulse Duration (Seconds)
0.001
=125°C
10
Eoff
3
Er
www.microsemi.com
Single Pulse
100
3.5
11
IGBT
0.01
70
60
50
40
30
20
10
80
60
40
20
8
7
6
5
4
3
2
1
0
0
0
APTGT35A120T1G
0
0
0
V
V
R
T
V
T
R
J
CE
GE
G
J
GE
G
Energy losses vs Collector Current
= 125°C
Reverse Bias Safe Operating Area
10
=125°C
= 27Ω
T
=27Ω
0.1
= 600V
= 15V
=15V
J
= 125°C
300
20
1
Output Characteristics
30
V
600
GE
I
=17V
V
C
Eoff
V
CE
40
(A)
2
CE
(V)
1
900
(V)
50
Eon
V
GE
60
1200
3
V
=15V
V
Eon
GE
Er
GE
=13V
70
=9V
1500
10
80
4
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