APT75GP120J Microsemi Power Products Group, APT75GP120J Datasheet - Page 4

• Manufacturer Part Number: APT75GP120J
• Description: IGBT 1200V 128A 543W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT75GP120J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 75A
• Current - Collector (ic) (max): 128A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 7.04nF @ 25V
• Power - Max: 543W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT75GP120JMI; APT75GP120JMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
14000
12000
10000
20000
15000
10000
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
6000
4000
2000
5000
120
100
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
40
30
20
10
80
60
40
20
0
0
0
I
I
CE
CE
10
10
I
0
0
CE
R
V
L = 100 µH
R
T
V
V
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
J
CE
GE
J
G
, COLLECTOR TO EMITTER CURRENT (A)
= 125°C
E
=125°C,V
E
= 5
=
20
= 600V
on2
= 600V
= +15V
on2
5 , L
R
T
V
T
J
J
G
GE
40
10
40
75A
=
= 25°C, V
37.5A
, GATE RESISTANCE (OHMS)
= 10V
40
25 or 125°C,V
=
GE
100
E
=10V
on2
60
µ
H, V
GE
70
70
20
150A
=10V
T
T
CE
J
J
80
=125°C, V
=
GE
V
T
R
L = 100 µH
=
25 or 125°C,V
T
CE
J
G
600V
=
100
J
100
= 25°C or 125°C
30
= 25°C, V
= 5
100 120 140 160
15V
= 600V
GE
E
V
off
=15V
GE
130
130
GE
150A
E
40
= 15V
GE
off
=15V
E
off
=
37.5A
10V
75A
160
160
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
12000
10000
15000
12500
10000
FIGURE 14, Turn Off Energy Loss vs Collector Current
8000
6000
4000
2000
7500
5000
2500
FIGURE 10, Turn-Off Delay Time vs Collector Current
350
300
250
200
150
100
160
140
120
100
FIGURE 12, Current Fall Time vs Collector Current
50
80
60
40
20
0
0
0
0
I
I
CE
CE
10
I
0
0
0
CE
R
T
V
L = 100 µH
R
V
V
R
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
V
J
G
CE
G
E
E
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
GE
V
CE
G
=
off
off
= 5
=
T
= 5
GE
20
20
T
= 600V
= 5
= 600V
= +15V
125°C, V
J
5 , L
=15V,T
J
= 600V
150A
75A
=
, JUNCTION TEMPERATURE (°C)
=
25
40
15V,T
125°C, V
40
40
T
=
J
J
100
=125°C
GE
=
J
=25°C
25°C, V
E
µ
60
=
60
GE
H, V
50
70
off
10V or 15V
=
T
37.5A
CE
J
10V or 15V
GE
80
80
=
=
25°C, V
V
=
600V
V
GE
100
75
GE
10V or 15V
100 120 140 160
100 120 140 160
=
=
10V,T
GE
10V,T
E
on2
=
E
J
130
100
10V or 15V
E
=125°C
on2
J
=25°C
150A
on2
37.5A
75A
APT75GP120J
160
125