APT75GP120J Microsemi Power Products Group, APT75GP120J Datasheet - Page 3

IGBT 1200V 128A 543W SOT227

APT75GP120J

Manufacturer Part Number
APT75GP120J
Description
IGBT 1200V 128A 543W SOT227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT75GP120J

Igbt Type
PT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 75A
Current - Collector (ic) (max)
128A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
7.04nF @ 25V
Power - Max
543W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT75GP120JMI
APT75GP120JMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT75GP120J
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT75GP120JDF3
Manufacturer:
TI/NSC
Quantity:
20 000
Part Number:
APT75GP120JDQ3
Manufacturer:
MICRON
Quantity:
101
TYPICAL PERFORMANCE CURVES
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.10
1.05
0.95
0.85
160
140
120
100
250
200
150
100
1.2
1.0
0.9
0.8
80
60
40
20
50
0
0
5
4
3
2
1
0
FIGURE 1, Output Characteristics(V
-50
V
0
0
6
CE
250µs PULSE TEST
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
250µs PULSE TEST
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
I
FIGURE 3, Transfer Characteristics
1
GE
C
T
-25
T
V GE = 15V.
J
= 150A
, GATE-TO-EMITTER VOLTAGE (V)
C
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
=125°C
1
2
8
0
T
3
C
=25°C
10
T J = 125°C
I
2
4
C
25
= 75A
5
T J = 25°C
50
T J = -55°C
I
12
C
3
6
250µs PULSE TEST
<0.5 % DUTY CYCLE
= 37.5A
7
75
T J = 25°C.
14
4
8
GE
100
= 15V)
9
125
16
10
5
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
160
140
120
100
180
160
140
120
100
2.0
1.0
80
60
40
20
16
14
12
10
80
60
40
20
0
8
6
4
2
0
5
4
3
0
0
FIGURE 2, Output Characteristics (V
-50
V
0
0
0
CE
250µs PULSE TEST
T
250µs PULSE TEST
<0.5 % DUTY CYCLE
I
<0.5 % DUTY CYCLE
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 75A
-25
V GE = 10V.
50
V GE = 15V.
I
C
T
25
T
C
1
= 150A
T
J
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
C
, Junction Temperature (°C)
100
0
=125°C
GATE CHARGE (nC)
25
T
50
2
C
150
V
=25°C
I
CE
C
50
= 75A
=600V
V
200
CE
75
3
75
=240V
250
100 125 150
V
I
CE
C
100
4
= 37.5A
=960V
300
GE
= 10V)
APT75GP120J
350
125
5

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