APTGT25A120T1G Microsemi Power Products Group, APTGT25A120T1G Datasheet - Page 5

• Manufacturer Part Number: APTGT25A120T1G
• Description: IGBT MODULE TRENCH PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT25A120T1G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.8nF @ 25V
• Power - Max: 156W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
1.6
1.4
1.2
0.8
0.6
0.4
0.2
80
70
60
50
40
30
20
10
0.00001
0
1
0
0
Operating Frequency vs Collector Current
switching
hard
0.05
0.9
0.7
0.5
0.3
0.1
10
ZVS
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
20
ZCS
I
C
(A)
30
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=27Ω
=600V
40
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
50
Single Pulse
0.01
50
40
30
20
10
APTGT25A120T1G
0
0
Forward Characteristic of diode
0.1
T
0.5
J
=125°C
1
V
F
(V)
T
1.5
1
J
=25°C
Diode
T
2
J
=125°C
2.5
10
5 – 5