APTGT25A120T1G Microsemi Power Products Group, APTGT25A120T1G Datasheet - Page 4

• Manufacturer Part Number: APTGT25A120T1G
• Description: IGBT MODULE TRENCH PHASE LEG SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT25A120T1G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 25A
• Current - Collector (ic) (max): 40A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.8nF @ 25V
• Power - Max: 156W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
50
40
30
20
10
50
40
30
20
10
8
7
6
5
4
3
2
1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
0
0
0.00001
0
0
0
5
V
V
I
T
C
J
CE
GE
= 25A
= 125°C
= 600V
=15V
0.9
0.5
0.3
0.05
0.1
0.7
Output Characteristics (V
0.5
6
40
Transfert Characteristics
Gate Resistance (ohms)
Eon
1
7
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
80
0.0001
T
1.5
J
V
=25°C
8
V
T
CE
J
GE
=25°C
(V)
T
(V)
J
120
2
=25°C
9
2.5
Eon
10
T
GE
J
T
=125°C
160
J
=15V)
=125°C
rectangular Pulse Duration (Seconds)
0.001
Eoff
Er
11
3
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Single Pulse
200
3.5
12
IGBT
0.01
60
50
40
30
20
10
50
40
30
20
10
6
5
4
3
2
1
0
0
0
APTGT25A120T1G
0
0
0
V
V
R
T
V
T
R
J
CE
GE
G
GE
J
G
Energy losses vs Collector Current
= 125°C
Reverse Bias Safe Operating Area
=125°C
= 27Ω
T
=27Ω
0.1
= 600V
= 15V
=15V
J
= 125°C
300
10
1
Output Characteristics
600
20
I
V
V
C
V
GE
CE
Eoff
(A)
CE
2
=17V
(V)
1
900
(V)
30
V
GE
Eon
1200
3
=15V
40
V
Eon
V
GE
GE
=13V
=9V
Er
1500
10
50
4
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