APT75GT120JRDQ3 Microsemi Power Products Group, APT75GT120JRDQ3 Datasheet - Page 5

• Manufacturer Part Number: APT75GT120JRDQ3
• Description: IGBT 1200V 97A 481W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT75GT120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 97A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 2.57nF @ 25V
• Power - Max: 481W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT75GT120JRDQ3G; APT75GT120JRDQ3G

TYPICAL PERFORMANCE CURVES
Figure 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
4,000
1,000
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
CE
Junction
temp. (°C)
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
(watts)
Power
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
10
RC MODEL
-4
0.0594
0.158
0.0436
30
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
10
ies
oes
res
-3
0.0254
0.496
11.6
50
SINGLE PULSE
10
-2
Figure 20, Operating Frequency vs Collector Current
50
10
5
3
15
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 5Ω
250
200
150
100
= 400V
Figure 18,Minimim Switching Safe Operating Area
50
25
0
°
°
I
C
C
C
0
V
, COLLECTOR CURRENT (A)
10
CE
-1
200
, COLLECTOR TO EMITTER VOLTAGE
35
400
45
Note:
Peak T J = P DM x Z θJC + T C
600
Duty Factor D =
55
1.0
800
t 1
65
t 2
1000 1200 1400
APT75GT120JRDQ3
t 1
75
/
t 2
F
f
f
P
max1
max2
max
diss
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f