APT75GT120JRDQ3 Microsemi Power Products Group, APT75GT120JRDQ3 Datasheet - Page 4

• Manufacturer Part Number: APT75GT120JRDQ3
• Description: IGBT 1200V 97A 481W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT75GT120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 97A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 2.57nF @ 25V
• Power - Max: 481W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT75GT120JRDQ3G; APT75GT120JRDQ3G

100000
FIGURE 15, Switching Energy Losses vs. Gate Resistance
50000
40000
30000
20000
10000
80000
60000
40000
20000
FIGURE 13, Turn-On Energy Loss vs Collector Current
160
140
120
100
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
60
50
40
30
20
10
80
60
40
20
0
0
0
0
I
I
CE
CE
10
10
10
I
0
CE
V
V
T
V
V
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
R
CE
GE
CE
GE
G
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
= 125°C
G
= 25°C
= 1.0Ω
= 1.0Ω
= 400V
= 400V
= +15V
= +15V
= 400V
=
R
1.0Ω, L
G
40
E
40
40
10
, GATE RESISTANCE (OHMS)
on2,
,
or 125°C
150A
V
=
T
GE
100
J
70
70
70
20
=
= 15V
µ
25 or 125°C,V
E
H, V
off,
75A
CE
E
100
100
100
off,
=
30
400V
37.5A
GE
=
130
130
130
40
E
15V
E
E
on2,
on2,
off,
37.5A
150A
75A
160
160
160
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
10000
45000
40000
35000
30000
25000
20000
15000
10000
FIGURE 14, Turn Off Energy Loss vs Collector Current
8000
6000
4000
2000
5000
FIGURE 10, Turn-Off Delay Time vs Collector Current
500
400
300
200
100
FIGURE 12, Current Fall Time vs Collector Current
70
60
50
40
30
20
10
0
0
0
0
I
I
CE
CE
10
10
10
I
0
CE
V
V
R
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
R
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
G
G
= 1.0Ω
GE
=
= 400V
T
= +15V
=
=
J
1.0Ω
=15V,T
, JUNCTION TEMPERATURE (°C)
400V
1.0Ω, L
40
40
40
25
T
J
=
J
125°C, V
=25°C
=
T
100
J
70
70
50
70
=
E
µ
E
25°C, V
on2,
H, V
T
on2,
GE
T
J
V
J
=
37.5A
E
GE
CE
75A
=
=
off,
125°C
100
100
25°C
100
15V
GE
=15V,T
=
37.5A
75
400V
=
E
15V
on2,
J
=125°C
150A
130
130
130
100
E
E
off,
off,
150A
75A
160
160
160
125