GA400TD25S Vishay, GA400TD25S Datasheet - Page 6

• Manufacturer Part Number: GA400TD25S
• Description: IGBT FAST 250V 400A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA400TD25S

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 36nF @ 30V
• Power - Max: 1350W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Dual INT-A-PAK (3 + 8)
• Collector- Emitter Voltage Vceo Max: 250 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *GA400TD25S; VS-GA400TD25S; VS-GA400TD25S; VSGA400TD25S; VSGA400TD25S

GA400TD25S
1 0 0 0
100
Fig. 13 - Typical Forward Voltage Drop vs.
6
1 0 0
80
60
40
20
1 0
Fig. 11 - Typical Switching Losses vs.
0
0.0
0

R
R
T
V
V
F o rw a rd V o lta g e D ro p - V
CC
GE
G1
G
J
Instantaneous Forward Current
Collector-to-Emitter Current
=15 ;R
I
0.5
= 150 C
= 150V
= 15V
= Ohm
C
125°C
, Collector-to-emitter Current (A)
200
°
1.0
G2
= 0
400
1.5
T = 12 5°C
T = 25 °C
J
J
F M
2.0
600
( V )
2.5
A
800
1000
Fig. 14 - Typical Stored Charge vs. di
1 0 0 0
8 0 0
6 0 0
4 0 0
2 0 0
1 2 0 0 0
1 0 0 0 0
8 0 0 0
6 0 0 0
4 0 0 0
2 0 0 0
0
0
0
V
T
V
4 0 0
G E
J
C E
G E
V
Fig. 12 - Reverse Bias SOA
I = 400A
I = 200A
I = 800A
V = 15 0V
T = 1 25 °C
T = 2 5°C
CE
F
F
F
= 125°C
= 20V
m easured at term inal (Peak V oltage)
R
J
J
, Collector-to-Emitter Voltage (V)
5 0 0
SAFE OPERATING AREA
1 0 0
di /dt - (A/µ s)
6 0 0
f
7 0 0
2 0 0
www.irf.com
8 0 0
f
/dt
9 0 0
3 0 0
A
A